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SiCプロセスチューブ
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SiCプロセスチューブ

VeTek Semiconductor は、半導体製造用の高性能 SiC プロセス チューブを提供しています。当社の SiC プロセスチューブは、酸化、拡散プロセスに優れています。優れた品質と職人技を備えたこれらのチューブは、効率的な半導体処理のための高温安定性と熱伝導性を提供します。当社は競争力のある価格を提供し、中国における長期的なパートナーとなることを目指しています。

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製品説明


VeTek Semiconductor is a leading China CVD SiC and TaC manufacturer, supplier and exporter. Adhering to the pursuit of perfect quality of products, so that our SiC Process Tubes have been satisfied by many customers. Extreme design, quality raw materials, high performance and competitive price are what every customer wants, and that's also what we can offer you. Of course, also essential is our perfect after-sales service. If you are interested in our spare parts for semiconductor services, you can consult us now, we will reply to you in time!


VeTek Semiconductor SiC Process Tube is a versatile component widely employed in semiconductor, photovoltaic, and microelectronic device manufacturing for its outstanding attributes such as high-temperature stability, chemical resistance, and superior thermal conductivity. These qualities render it a preferred choice for rigorous high-temperature processes, ensuring consistent heat distribution and a stable chemical environment that significantly enhances manufacturing efficiency and product quality.


VeTek Semiconductor's SiC Process Tube is recognized for its exceptional performance, commonly utilized in oxidation, diffusion, annealing, and chemical vapor deposition (CVD) processes within semiconductor manufacturing. With a focus on excellent craftsmanship and product quality, our SiC Process Tube guarantees efficient and dependable semiconductor processing, leveraging the high-temperature stability and thermal conductivity of SiC material. Committed to providing top-tier products at competitive prices, we aspire to be your trusted, long-term partner in China.

We are the only SiC plant in China with 99.96% purity, which can be used directly for wafer contact and provide CVD silicon carbide coating to reduce impurity content to less than 5ppm.



Product parameter of the SiC Process Tube:

Physical properties of Recrystallized Silicon Carbide
Property Typical Value
Working temperature (°C) 1600°C (with oxygen), 1700°C (reducing environment)
SiC content > 99.96%
Free Si content < 0.1%
Bulk density 2.60~2.70 g/cm3
Apparent porosity < 16%
Compression strength > 600 MPa
Cold bending strength 80~90 MPa (20°C)
Hot bending strength 90~100 MPa (1400°C)
Thermal expansion @1500°C 4.70 10-6/°C
Thermal conductivity @1200°C 23  W/m•K
Elastic modulus 240 GPa
Thermal shock resistance Extremely good


VeTek Semiconductor SiC Process Tube Production shops:

SiC Process Tube Production shops


Overview of the semiconductor chip epitaxy industry chain:

semiconductor chip epitaxy industry chain


ホットタグ: SiC プロセス チューブ、中国、メーカー、サプライヤー、工場、カスタマイズ、購入、高度な、耐久性、中国製
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